Παρασκευή Κ. Ευθυμίου

(1923 - 2013)
  • Διατριβή επί διδακτορία: Έρευνα της χαρακτηριστικής θερμοκρασίας του λευκοχρύσου δι' ακτίνων Roentgen, Αθήναι 1952 [Επίσης στο Αρχείο διατριβών ΕΚΤ]
  • Διατριβή επί υφηγεσία: Επίδρασις των ακτίνων β επί της μαγνητοαντιστάσεως και της ευκινησίας των φορέων του ινδιούχου αντιμονίου, Αθήναι 1963 [Από το Αρχείο διατριβών ΕΚΤ]
  • Τίτλοι - σπουδές και επιστημονικές εργασίες 1978
  • Συμπλήρωμα του βιογραφικού σημειώματος του 1978 [1979]


    Δημοσιεύσεις
    1. THE CHARACTERISTIC TEMPERATURE OF PLATINUM FROM X-RAY REFLECTIONS
      ALEXOPOULOS, K; EUTHYMIOU, P
      PHILOSOPHICAL MAGAZINE 45, 1332-1342 (1954)
      DOI:
    2. EFFECT OF ELECTRON IRRADIATION ON MAGNETORESISTANCE OF INSB
      EUTHYMIO.PC
      PHYSICA STATUS SOLIDI 8, 131-& (1965)
      DOI: 10.1002/pssb.19650080113
    3. EFFECT OF NEUTRON AND GAMMA-RAY IRRADIATION ON CARRIER LIFETIME AND DETECTIVITY OF INSB
      EUTHYMIO.PC; TANENBAU.AL
      PHYSICA STATUS SOLIDI 16, 183-& (1966)
      DOI: 10.1002/pssb.19660160116
    4. EFFECT OF ELECTRON IRRADIATION ON MINORITY CARRIER MOBILITY AND LIFETIME OF P-TYPE INSB
      EUTHYMIO.PC; RAVANOS, CE
      PHYSICA STATUS SOLIDI 38, K85-& (1970)
      DOI: 10.1002/pssb.19700380174
    5. EFFECT OF ELECTRON BOMBARDMENT ON MINORITY AND MAJORITY CARRIER LIFETIMES OF GASB
      EUTHYMIO.PC; KLADIS, DI; RAVANOS, CE; BEKRIS, PD
      PHYSICA STATUS SOLIDI B-BASIC RESEARCH 47, K91-& (1971)
      DOI: 10.1002/pssb.2220470241
    6. CARRIER LIFETIMES IN LOW-RESISTIVITY GAAS UPON ELECTRON-BOMBARDMENT AND ANNEALING
      KLADIS, DI; EUTHYMIO.PC
      PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 10, 479-& (1972)
      DOI: 10.1002/pssa.2210100216
    7. MAGNETOPHOTOCONDUCTIVITY OF SEMI-INSULATING GAAS AND ITS BEHAVIOR UPON ELECTRON-BOMBARDMENT
      NOMICOS, CD; EUTHYMIO.PC
      JOURNAL OF APPLIED PHYSICS 43, 5131-5134 (1972)
      DOI: 10.1063/1.1661084
    8. BEHAVIOR OF MAGNETOPHOTOCONDUCTIVITY OF SEMI-INSULATING GAAS UPON ALPHA-PARTICLE BOMBARDMENT
      EUTHYMIO.PC; NOMICOS, CD; PHILADEL.AT
      JOURNAL OF APPLIED PHYSICS 44, 521-522 (1973)
      DOI: 10.1063/1.1661928
    9. TEMPERATURE-DEPENDENCE OF MINORITY-CARRIER LIFETIME IN LOW-RESISTIVITY GAAS
      KLADIS, DI; EUTHYMIO.PC
      JOURNAL OF APPLIED PHYSICS 45, 2775-2776 (1974)
      DOI: 10.1063/1.1663666
    10. DETERMINATION OF CARRIER MOBILITIES IN SEMI-INSULATING GAAS
      PHILADEL.AT; EUTHYMIO.PC
      JOURNAL OF APPLIED PHYSICS 45, 955-957 (1974)
      DOI: 10.1063/1.1663349
    11. CARRIER LIFETIME OF SEMI-INSULATING GAAS IN REGION OF MAGNETOCONCENTRATION
      NOMICOS, CD; PHILADELPHEUS, AT; EUTHYMIOU, PC
      JOURNAL OF APPLIED PHYSICS 46, 4106-4107 (1975)
      DOI: 10.1063/1.322127
    12. SURFACE RECOMBINATION VELOCITY IN P-TYPE INSB UPON ETCHING AND ALPHA-PARTICLE BOMBARDMENT
      EUTHYMIOU, PC; SKOUNTZOS, PA; POLYCHRONAKIS, KS
      JOURNAL OF APPLIED PHYSICS 46, 1421-1423 (1975)
      DOI: 10.1063/1.321716
    13. CARRIER CONCENTRATION RATIO AND HALL-MOBILITY OF SEMI-INSULATING GAAS UPON PHOTOEXCITATION AND ELECTRON-BOMBARDMENT
      EUTHYMIOU, PC; NOMICOS, CD; THEODOROU, DE
      JOURNAL OF APPLIED PHYSICS 46, 449-451 (1975)
      DOI: 10.1063/1.322258
    14. DEPENDENCE OF SURFACE RECOMBINATION VELOCITY OF INSB ON TEMPERATURE AND ALPHA-BOMBARDMENT DOSE
      SKOUNTZOS, PA; EUTHYMIOU, PC
      JOURNAL OF APPLIED PHYSICS 47, 4693-4696 (1976)
      DOI: 10.1063/1.322364
    15. MAGNETOPHOTOCONDUCTIVITY OF SEMI-INSULATING GAAS AS A FUNCTION OF LIGHT-INTENSITY
      NOMICOS, CD; EUTHYMIOU, PC; PAPAIOANNOU, GI
      JOURNAL OF APPLIED PHYSICS 47, 3365-3366 (1976)
      DOI: 10.1063/1.323095
    16. EFFECT OF REPEATED VARIOUS SURFACE TREATMENTS ON SURFACE RECOMBINATION VELOCITY OF N-INSB
      SKOUNTZOS, PA; EUTHYMIOU, PC
      JOURNAL OF APPLIED PHYSICS 48, 430-433 (1977)
      DOI: 10.1063/1.323351
    17. EFFECT OF ILLUMINATION ON MOBILITIES IN SEMI-INSULATING GAAS
      THEODOROU, DE; EUTHYMIOU, PC
      JOURNAL OF APPLIED PHYSICS 48, 427-429 (1977)
      DOI: 10.1063/1.323350
    18. SCATTERING MECHANISMS OF HEAVY AND LIGHT HOLES IN P-TYPE GALLIUM ANTIMONIDE
      HADJICONTIS, BE; EUTHYMIOU, PC; KLADIS, DI
      SOLID STATE COMMUNICATIONS 27, 633-635 (1978)
      DOI: 10.1016/0038-1098(78)90459-3
    19. TEMPERATURE-DEPENDENCE OF HOLE MOBILITY IN NORMAL-TYPE INSB UPON ELECTRON-BOMBARDMENT
      EUTHYMIOU, PC; EFTAXIAS, CA; RAMMOS, EA; RAVANOS, CE; CONSTANDINIDES, SP
      SOLID STATE COMMUNICATIONS 28, 989-992 (1978)
      DOI: 10.1016/0038-1098(78)90655-5
    20. ABSOLUTE EFFICIENCY OF CSL-NA PHOSPHOR UNDER FLUOROSCOPY CONDITIONS
      NOMICOS, CD; GIAKOUMAKIS, GE; RAVANOS, CE; EUTHYMIOU, PC; SANDILOS, PX
      JOURNAL OF APPLIED PHYSICS 49, 4564-4565 (1978)
      DOI: 10.1063/1.325469
    21. ABSOLUTE EFFICIENCY OF (ZNCD)S - AG PHOSPHOR UNDER FLUOROSCOPY CONDITIONS
      NOMICOS, CD; GIAKOUMAKIS, GE; EUTHYMIOU, PC; SANDILOS, PX
      JOURNAL OF APPLIED PHYSICS 49, 3636-3638 (1978)
      DOI: 10.1063/1.325209
    22. PROFILE OF CARRIER LIFETIMES IN ILLUMINATED GAAS AS A FUNCTION OF DEPTH
      PAPAIOANNOU, GI; EUTHYMIOU, PC
      JOURNAL OF APPLIED PHYSICS 49, 2578-2580 (1978)
      DOI: 10.1063/1.325072
    23. MAGNETOPHOTOCONDUCTIVITY OF SEMI-INSULATING GAAS AS A FUNCTION OF ETCHING TIME
      EFTAXIAS, CA; EUTHYMIOU, PC; NOMICOS, CD
      SOLID STATE COMMUNICATIONS 29, 629-631 (1979)
      DOI: 10.1016/0038-1098(79)90679-3
    24. DETERMINATION OF SHALLOW TRAPS IN N-TYPE GAP
      POLYCHRONAKIS, KS; EUTHYMIOU, PC
      SOLID STATE COMMUNICATIONS 31, 889-892 (1979)
      DOI: 10.1016/0038-1098(79)90411-3
    25. LIGHT ANGULAR-DISTRIBUTION AND MODULATION TRANSFER-FUNCTION OF A FLUORESCENT SCREEN EXCITED BY AN ELECTRON-BEAM
      GIAKOUMAKIS, GE; NOMICOS, CD; EUTHYMIOU, PC
      CANADIAN JOURNAL OF PHYSICS 57, 2190-2193 (1979)
      DOI:
    26. SPECTRUM OF LIGHT EMITTED FROM ZNCDS - AG SCREENS EXCITED BY AN ELECTRON-BEAM
      GIAKOUMAKIS, GE; NOMICOS, CD; EUTHYMIOU, PC
      APPLIED PHYSICS 20, 357-359 (1979)
      DOI: 10.1007/BF00895010
    27. TEMPERATURE-DEPENDENCE OF MOBILITIES AND CARRIER CONCENTRATIONS IN SEMI-INSULATING GAAS
      HALOULOS, SG; PAPASTAMATIOU, MJ; KALKANIS, GT; NOMICOS, CD; EUTHYMIOU, PC; PAPAIOANNOU, GJ
      SOLID STATE COMMUNICATIONS 34, 245-247 (1980)
      DOI: 10.1016/0038-1098(80)90402-0
    28. MODULATION TRANSFER-FUNCTION OF FLUORESCENT SCREENS EXCITED BY X-RAYS
      GIAKOUMAKIS, GE; NOMIKOS, CD; EUTHYMIOU, PC
      PHYSICS IN MEDICINE AND BIOLOGY 25, 1105-1110 (1980)
      DOI: 10.1088/0031-9155/25/6/008
    29. ABSOLUTE EFFICIENCY OF ZNCDS-AG SCREENS EXCITED BY AN ELECTRON-BEAM
      GIAKOUMAKIS, GE; NOMICOS, CD; EUTHYMIOU, PC
      JOURNAL OF APPLIED PHYSICS 51, 4976-4980 (1980)
      DOI: 10.1063/1.328375
    30. DEPENDENCE OF SURFACE RECOMBINATION VELOCITY OF P-TYPE INSB ON TEMPERATURE AND ALPHA-PARTICLE BOMBARDMENT
      EUTHYMIOU, PC; SKOUNTZOS, PA; RAVANOS, CE; HADJIKONTIS, BE
      SOLID STATE COMMUNICATIONS 37, 733-736 (1981)
      DOI: 10.1016/0038-1098(81)91088-7
    31. TEMPERATURE-DEPENDENCE OF MAGNETOPHOTOCONDUCTIVITY IN N-TYPE INSB
      SKOUNTZOS, PA; HADJICONTIS, BE; HALOULOS, SG; EUTHYMIOU, PC
      SOLID STATE COMMUNICATIONS 37, 445-447 (1981)
      DOI: 10.1016/0038-1098(81)91225-4
    32. SOME ASPECTS ON THE GENERATION AND TRANSMISSION OF LIGHT IN PHOSPHOR SCREENS EXCITED BY AN ELECTRON-BEAM
      GIAKOUMAKIS, GE; NOMICOS, CD; EUTHYMIOU, PC
      CANADIAN JOURNAL OF PHYSICS 59, 88-92 (1981)
      DOI:
    33. TRANSPORT PARAMETERS OF PARTIALLY ILLUMINATED SEMICONDUCTORS
      PAPAIOANNOU, GJ; EUTHYMIOU, PC; PAPASTAMATIOU, MJ
      SOLID STATE COMMUNICATIONS 46, 165-167 (1983)
      DOI: 10.1016/0038-1098(83)90602-6
    34. TEMPERATURE-DEPENDENCE OF ZNCDS-AG CATHODOLUMINESCENCE EFFICIENCY UNDER ELECTRON-BEAM EXCITATION
      KALIAKATSOS, JA; EUTHYMIOU, PC; NOMICOS, CD; GIAKOUMAKIS, GE
      APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING 31, 213-214 (1983)
      DOI: 10.1007/BF00614956
    35. TRANSPORT PARAMETERS OF N-TYPE GASB
      KOURKOUTAS, CD; BEKRIS, PD; PAPAIOANNOU, GJ; EUTHYMIOU, PC
      SOLID STATE COMMUNICATIONS 49, 1071-1075 (1984)
      DOI: 10.1016/0038-1098(84)90426-5
    36. ANOMALOUS MAGNETORESISTANCE EFFECTS IN TE DOPED GASB
      KOURKOUTAS, CD; BEKRIS, PD; PAPAIOANNOU, GJ; EUTHYMIOU, PC
      SOLID STATE COMMUNICATIONS 55, 881-885 (1985)
      DOI: 10.1016/0038-1098(85)90199-1
    37. PHOTOVOLTAIC EFFECTS OF GAAS-MESFET LAYERS
      PAPAIOANNOU, GJ; KALIAKATSOS, JA; EUTHYMIOU, PC; FORREST, JR
      IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION 132, 167-169 (1985)
      DOI:
    38. ELECTRON-DAMAGE STUDIES IN GAP AT LOW-TEMPERATURE
      EUTHYMIOU, PC; PAPAIOANNOU, GJ; KALIAKATSOS, JA; KOURKOUTAS, CD; BANBURY, P
      SOLID STATE COMMUNICATIONS 58, 193-195 (1986)
      DOI: 10.1016/0038-1098(86)90841-0
    39. ON THE ELECTRON-IRRADIATION INDUCED DEFECTS IN GAP-ZN
      PAPAIOANNOU, GJ; EUTHYMIOU, PC; CARABATOS, C; LEPLEY, B; BATH, A
      PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 98, K125-K127 (1986)
      DOI: 10.1002/pssa.2210980246
    40. TRANSPORT PARAMETERS IN ILLUMINATED LAYERS OF SEMIINSULATING GAAS
      EUTHYMIOU, PC; PAPAIOANNOU, GJ; KOURKOUTAS, CD; BANBURY, PC
      SOLID STATE COMMUNICATIONS 62, 423-425 (1987)
      DOI: 10.1016/0038-1098(87)91047-7
    41. DETERMINATION BY OPTICAL DLTS OF THE DISTRIBUTION OF STATES NEAR THE VALENCE BAND OF PLASMA OXIDIZED N-TYPE INP
      LEPLEY, B; BATH, A; CARABATOSNEDELEC, C; PAPAIOANNOU, GJ; EUTHYMIOU, PC; RAVELET, S
      PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 108, K41-K46 (1988)
      DOI: 10.1002/pssa.2211080160
    42. DETERMINATION OF THE SCATTERING MECHANISMS IN PARA-TYPE SEMICONDUCTORS OF THE III-V GROUP - THE CASE OF ZN-DOPED GAP AND NATURAL (UNDOPED) GASB
      KOURKOUTAS, CD; PAPAIOANNOU, GJ; EUTHYMIOU, PC; ZARDAS, GE
      SOLID STATE COMMUNICATIONS 67, 651-655 (1988)
      DOI: 10.1016/0038-1098(88)90185-8
    43. INFLUENCE OF ILLUMINATION INTENSITY ON NEGATIVE PHOTOCONDUCTIVITY OF SI ION-IMPLANTED GAAS-CR
      PAPAIOANNOU, GJ; NOWAK, M; EUTHYMIOU, PC
      JOURNAL OF APPLIED PHYSICS 65, 4864-4868 (1989)
      DOI: 10.1063/1.343199
    44. ON THE IMPURITY PHOTOCONDUCTIVITY OF SEMI-INSULATING GAP-CR
      PAPAIOANNOU, GJ; ANAGNOSTAKIS, E; EUTHYMIOU, PC; KOURKOUTAS, CD; ZARDAS, G
      PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 114, K215-K218 (1989)
      DOI: 10.1002/pssa.2211140261
    45. DEPENDENCE OF I-U CHARACTERISTICS OF GAAS-MESFET ON TEMPERATURE AND ELECTRON-IRRADIATION
      EUTHYMIOU, PC; BANBURY, PC; PAPAIOANNOU, GJ; ZARDAS, GE
      PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 116, K133-K135 (1989)
      DOI: 10.1002/pssa.2211160172
    46. DLTS STUDIES OF DEFECTS IN GAP-TE BEFORE AND AFTER ELECTRON-IRRADIATION
      BANBURY, PC; EUTHYMIOU, PC; KOURKOUTAS, CD; ZARDAS, GE
      SOLID STATE COMMUNICATIONS 74, 305-308 (1990)
      DOI: 10.1016/0038-1098(90)90191-D
    47. DEPENDENCE OF THE MOBILITY LIMIT UPON THE FERMI LEVEL POSITION IN DIRECT GAP III-V GROUP SEMICONDUCTORS
      KOURKOUTAS, CD; EUTHYMIOU, PC; PAPAIOANNOU, GJ
      SOLID STATE COMMUNICATIONS 74, 999-1001 (1990)
      DOI: 10.1016/0038-1098(90)90473-O
    48. DEPENDENCE OF I-U CHARACTERISTICS OF GAAS-MESFETS ON TEMPERATURE AND ALPHA-PARTICLE IRRADIATION
      ZARDAS, GE; EUTHYMIOU, PC; SZENTPALI, B; SYMEONIDES, C; KOURKOUTAS, K
      PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 123, K79-K82 (1991)
      DOI: 10.1002/pssa.2211230153
    49. CORRECTION OF THE DRIFT MOBILITY MEASUREMENTS IN GAAS-MESFETS
      KOURKOUTAS, CD; EUTHYMIOU, PC; SZENTPALI, B; KOVACS, B; SOMOGYI, K
      SOLID STATE COMMUNICATIONS 78, 849-852 (1991)
      DOI: 10.1016/0038-1098(91)90633-7
    50. EFFECT OF ELECTRON-IRRADIATION ON THE MOBILITY PROFILE IN GAAS FATFET
      SZENTPALI, B; KOVACS, B; HUBER, D; KOURKOUTAS, CD; EUTHYMIOU, PC; ZARDAS, GE
      SOLID STATE COMMUNICATIONS 80, 321-323 (1991)
      DOI: 10.1016/0038-1098(91)90138-L
    51. EFFECT OF ALPHA-PARTICLE IRRADIATION ON ALGAAS/GAAS PLANAR PHOTOCONDUCTIVE DETECTORS AT LOW-TEMPERATURES
      ZARDAS, GE; EUTHYMIOU, PC; SYMEONIDES, C; KOURKOUTAS, CD; YANNAKOPOULOS, PH
      PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 133, K49-K52 (1992)
      DOI: 10.1002/pssa.2211330129
    52. LONG-RANGE EFFECT IN ION-IMPLANTED GAAS
      ALESHCHENKO, YA; BOBROVA, EA; VAVILOV, VS; VODOPYANOV, LK; GALKIN, GN; CHUKICHEV, MV; RESVANOV, RR; EUTHYMIOU, P; KOURKOUTAS, C; BEKRIS, P; SOKOLOV, SY; KUZEMCHENKO, TA; KHAVROSHIN, DL; KIV, AE
      RADIATION EFFECTS AND DEFECTS IN SOLIDS 125, 323-331 (1993)
      DOI: 10.1080/10420159308220210
    53. THE EFFECT OF ELECTRON-IRRADIATION DOSE ON THE PROFILE OF ELECTRIC CHARACTERISTICS OF GAAS VPE LAYERS
      KOURKOUTAS, CD; KOVACS, B; EUTHYMIOU, PC; SZENTPALI, B; SOMOGYI, K; BANBURY, PC; ZARDAS, GE
      PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 135, K21-K24 (1993)
      DOI: 10.1002/pssa.2211350135
    54. EFFECT OF ALPHA-PARTICLE IRRADIATION ON GAAS PLANAR PHOTOCONDUCTIVE DETECTORS AT LOW-TEMPERATURES
      EUTHYMIOU, PC; ZARDAS, GE; SYMEONIDIS, C; BANBURY, PC; KOURKOUTAS, CD
      PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 139, K113-K116 (1993)
      DOI: 10.1002/pssa.2211390236
    55. A STUDY OF THE PROFILE OF THE E3 ELECTRON TRAP IN GAAS
      KOURKOUTAS, CD; KOVACS, B; EUTHYMIOU, PC; SZENTPALI, B; SOMOGYI, K; GIAKOUMAKIS, GE
      SOLID STATE COMMUNICATIONS 89, 45-49 (1994)
      DOI: 10.1016/0038-1098(94)90415-4
    56. Room temperature persistent photoconductivity in GaP : S
      Zardas, GE; Theodorou, DE; Euthymiou, PC; Symeonides, CI; Riesz, F; Szentpall, B
      SOLID STATE COMMUNICATIONS 105, 77-79 (1998)
      DOI: 10.1016/S0038-1098(97)10065-5
    57. The influence of small doses of fast neutron irradiation on the critical temperature and EPR spectra of YBa2Cu3O7-delta high temperature superconductors
      Karchava, G; Guskos, N; Glenis, S; Likodimos, V; Kekelidze, N; Tsintsadze, G; Euthymiou, P
      PHYSICA C 317, 561-564 (1999)
      DOI: 10.1016/S0921-4534(99)00130-6
    58. Electrical and detection performance of radiation detector based on bulk semi-insulating InP : Fe: Role of detector volume
      Zat'ko, B; Dubecky, F; Darmo, J; Euthymiou, P; Necas, V; Krempasky, M; Sekacova, M; Korytar, D; Csabay, O; Harmatha, L; Pelfer, PG
      ASDAM 2000: THIRD INTERNATIONAL EUROCONFERENCE ON ADVANCED SEMICONDUCTOR DEVICES AND MICROSYSTEMS - CONFERENCE PROCEEDINGS , 429-432 (2000)
      DOI: 10.1109/ASDAM.2000.889537
    59. Dependence of GaAs : Si persistent photoconductivity on temperature and alpha-particle irradiation
      Zardas, GE; Yannakopoulos, PH; Ziska, M; Symeonides, C; Euthymiou, PC; Csabay, O
      MICROELECTRONICS JOURNAL 36, 1-4 (2005)
      DOI: 10.1016/j.mejo.2004.10.011
    60. Persistent photoconductivity in a InP : Fe single layer structure at room temperature
      Zardas, GE; Yannakopoulos, PH; Symeonides, CI; Csabay, O; Euthymiou, PC
      MATERIALS SCIENCE-POLAND 23, 985-988 (2005)
      DOI:
    61. Temperature dependence of Si-GaAs energy gap using photoconductivity spectra
      Zardas, GE; Yannakopoulos, PH; Ziska, M; Symeonides, C; Vesely, M; Euthymiou, PC
      MICROELECTRONICS JOURNAL 37, 91-93 (2006)
      DOI: 10.1016/j.mejo.2005.04.056
    62. Influence of low energy alpha-particle fluxes on the photoconductivity of GaAs
      Euthymiou, P. C.; Symeonides, Ch. I.; Yannakopoulos, P. H.; Zardas, G. E.
      REVIEWS ON ADVANCED MATERIALS SCIENCE 14, 183-186 (2007)
      DOI:
    63. Electron irradiation induced defects in undoped and Te doped gallium phosphide
      Zardas, G. E.; Symeonides, Ch. I.; Euthymiou, P. C.; Papaioannou, G. J.; Yannakopoulos, P. H.; Vesely, M.
      SOLID STATE COMMUNICATIONS 145, 332-336 (2008)
      DOI: 10.1016/j.ssc.2007.12.003
    64. A study of electron transition in the energy gap of SI-GaAs with photoconductivity spectra and under alpha-particle irradiation
      Zardas, G. E.; Yannakopoulos, P. H.; Symeonides, Chrys I.; Vesely, M.; Euthymiou, P. C.
      MICROELECTRONICS JOURNAL 39, 737-739 (2008)
      DOI: 10.1016/j.mejo.2007.12.024
    65. BEHAVIOUR OF SEMI-INSULATING GaAs ENERGY LEVELS
      Yannakopoulos, P. H.; Zardas, G. E.; Papaioannou, G. J.; Symeonides, Ch. I.; Vesely, M.; Euthymiou, P. C.
      REVIEWS ON ADVANCED MATERIALS SCIENCE 22, 52-59 (2009)
      DOI: