The electron affinity of gallium nitride (GaN) and digallium nitride (GaNGa): The importance of the basis set superposition error in strongly bound systems
J. Chem. Phys. 128, 144103 (2008); DOI:10.1063/1.2883997
Published 8 April 2008The electron affinity of GaN and Ga2N as
well as the geometries and the dissociation energies of the ground
states of gallium nitrides GaN, GaN−, Ga2N, and
Ga2N− were systematically studied by employing
the coupled cluster method, RCCSD(T), in conjunction with a series of
basis sets, (aug-)cc-pVxZ(-PP), x=D, T, Q, and 5 and
cc-pwCVxZ(-PP), x=D, T, and Q. The calculated dissociation
energy and the electron affinity of GaN are 2.12 and
1.84 eV, respectively, and those of Ga2N are 6.31
and 2.53 eV. The last value is in excellent agreement with
a recent experimental value for the electron affinity of
Ga2N of 2.506±0.008 eV. For such quality in the
results to be achieved, the Ga 3d electrons had to be included
in the correlation space. Moreover, when a basis set is used, which
has not been developed for the number of the electrons which
are correlated in a calculation, the quantities calculated need to
be corrected for the basis set superposition error. ©2008 American
Institute of Physics
History: | Received 3 December 2007; accepted 28 January 2008; published 8 April 2008 |
Permalink: | http://link.aip.org/link/?JCPSA6/128/144103/1 |
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0021-9606 (print) 1089-7690 (online)
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